|
Part Number |
On-resistance (mΩ) |
|
5.4 |
|
|
8.6 |
|
|
10 |
|
|
18 |
|
|
23 |
|
|
33 |
|
|
44 |
|
|
58 |

These Gen 4 SiC FETs offer unmatched performance across the main figures of merit (FOM) for on-resistance and output capacitance. The devices have 4-10x lower on-resistance than competing best-in-class Si MOSFETs, SiC MOSFETs and GaN transistors. The 750V rating of the SiC FETs is also 100-150V higher than the alternative technologies, providing a significantly enhanced design margin for managing voltage transients. Read more > >

The TOLL package is 30% smaller in footprint than the D2PAK with a size of 10mm x 11.7mm. Also, at 2.3 mm the TOLL is half the height of D2PAK, which affords additional fin height to the heatsink in the thermomechanical design.
AC/DC & High-Voltage DC/DC Power Supplies
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